Product
The whole equipment is a cluster structure, which is composed of photoelectric conversion film deposition system, MAMS electronic stripping system, exhaust packaging system, getter material vacuum coating system and overall degassing system. Can realize the overall automatic coordination operation, can also be independent operation of each system, do not interfere with each other, can be set between the system interlock. 316 material manufacturing, reserved a number of flange interface.
View DetailsProduction-type TGV/TSV/TMV high-vacuum magnetron sputtering coating machine
Production-grade TGV/TSV/TMV high-vacuum magnetron sputtering coating system (Sputter-2000W series): This equipment is used for depositing metal seed layers on glass substrates and ceramic substrates, enabling high-density through-holes and blind vias with a depth-to-diameter ratio exceeding 10:1.
View DetailsUltra-High Vacuum High-Energy Pulsed Magnetron Sputtering Coating System (HITSemi-UHV-HIPIMS)
Ultra-high vacuum, high-energy pulsed magnetron sputtering coating equipment utilizes nanoscale and atomic‑level manufacturing technologies in an ultra‑clean environment to grow high‑purity, high‑quality thin films. One application scenario is the growth of GaN single crystal thin films and the realization of processes for preparing GaN‑based dilute magnetic semiconductor molecular structure materials.
View DetailsMBE molecular beam epitaxy equipment
Molecular Beam Epitaxy (MBE) thin-film growth equipment—Molecular Beam Epitaxy MBE—enables epitaxial growth on certain substrates, allowing for the fabrication of molecular self-assembled structures, superlattices, quantum wells, one-dimensional nanowires, and more. It can also be used for process verification and the growth and fabrication of epitaxial wafers for both second-generation and third-generation semiconductors. During thin-film epitaxial growth, Molecular Beam Epitaxy equipment provides an ultra-high vacuum environment, enabling epitaxial growth under ideal conditions. This eliminates various interfering factors during film growth, resulting in high-precision thin films with exceptional accuracy.
View DetailsAbout Us
Pengcheng Semiconductor Technology (Shenzhen) Co., Ltd.
By the Harbin Institute of Technology (Shenzhen) and has many years of practical experience in the team of engineers to jointly initiate the creation.
Pengcheng Semiconductor Technology (Shenzhen) Co., Ltd. was co-founded by Harbin Institute of Technology, Shenzhen (HIT Shenzhen) and a team of engineers with years of practical industry experience. Positioned at the intersection of technology, market and industry, the company adheres to innovation and sustainable development. It is committed to breaking through industrial technical bottlenecks and tackling localization challenges, so as to advance the independent controllability of the industrial chain. Pengcheng Micro-Nano Technology (Shenyang) Co., Ltd., a wholly-owned subsidiary of Pengcheng Semiconductor Technology (Shenzhen) Co., Ltd., serves as the core R&D and manufacturing base for semiconductor and general semiconductor processes and equipment.
Further understandingCompany establishment time
technology patent
technology accumulation
Customer Service
Laboratory and R & D Center
Relying on the complete experimental platform and test analysis platform of Harbin Institute of Technology (Shenzhen), it provides support for R & D and production.
News
TSV Technology: A Core Pillar of AI Computing Power
2026-07-01
2026-06-24
2026-05-19
2026-05-16