MBE Molecular Beam Epitaxy Equipment
Molecular Beam Epitaxy (MBE) equipment can achieve epitaxial growth processes on certain substrates, enabling molecular self-assembly, superlattices, quantum wells, one-dimensional nanowires, and more. It can be used for process verification and the growth and manufacturing of epitaxial wafers for both second-generation and third-generation semiconductors. The MBE equipment provides an ultra-high vacuum environment during thin film epitaxial growth, creating an ideal setting for this process. It effectively eliminates various interference factors during film growth, resulting in high-precision thin films.
- Product Description
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Molecular Beam Epitaxy (MBE) EquipmentThis equipment can achieve epitaxial growth processes on certain substrates, enabling molecular self-assembly, superlattices, quantum wells, one-dimensional nanowires, etc. It can be used for process verification and epitaxial wafer growth and manufacturing of second-generation and third-generation semiconductors.
The molecular beam epitaxy equipment has an ultra-high vacuum environment during thin film epitaxial growth, providing an ideal environment for thin film growth. It can eliminate various interference factors during film growth, resulting in ideal high-precision films.
The molecular beam epitaxy experimental equipment designed and manufactured by our company comes in experimental and production types, with reasonable configuration, simple structure, easy operation, advanced technology, reliable performance, versatile applications, strong practicality, and relatively low prices, suitable for laboratories and research institutions in universities for teaching experiments, scientific research, and process experiments in molecular beam epitaxy.Production-type MBE can be used for the preparation of small batches of epitaxial wafers.
Functional Features
This project completed the full domestic research and development design and manufacturing of a complete set of MBE in 2005, achieving independent control. It independently designed core components such as the ultra-high vacuum epitaxial growth chamber, process control system and software, RHEED in-situ real-time monitoring instrument, linear electron gun, high-temperature source furnace, source furnace power supply, high-temperature sample stage, and film thickness gauge (which can measure the number of molecular layers grown epitaxially).
It can achieve epitaxial growth of second-generation semiconductors (such as gallium arsenide) and third-generation semiconductors (such as silicon carbide and gallium nitride). After more than a decade of process exploration, the equipment design has been continuously upgraded, and it now has the capability to design and manufacture production-type MBE equipment. The equipment has reasonable configuration, simple structure, advanced technology, reliable performance, versatile applications, strong practicality, and high performance-to-price ratio.
Equipment Composition and Main Technical Indicators
Equipment Composition
Sample Loading Chamber
This chamber is used for the entry and exit of samples and is equipped with a multi-sample storage function. The sample library can hold six substrates.
Pre-treatment Chamber
This chamber is used for vacuum plasma stripping cleaning and vacuum high-temperature degassing of samples before entering the epitaxy chamber, as well as other preliminary process treatments. It is also used for post-process treatment of epitaxial samples, such as high-temperature annealing, etc.
Epitaxy Chamber
Ultra-high vacuum clean vacuum chamber, achieving molecular beam epitaxy processes.
Main Technical Indicators of Molecular Beam Epitaxy Equipment (MBE)
Sample Loading Chamber
Ultimate Vacuum: 5.0×10-5Pa
Sample Loading Quantity: 6 pieces (φ2 inches to φ4 inches, with sample carriers)
Pre-treatment Chamber
Ultimate Vacuum: 5×10-7Pa
Sample Stage Heating Temperature: Room Temperature to 850℃±1℃ (PID Control)
Ion Cleaning Source: Φ60; 100 ～ 500eV
Epitaxy Chamber
*Some components of the process chamber are configured differently based on customer requirements.Project
Parameters
Ultimate Vacuum
Ion Pump 8.0× 10-9Pa (with cold trap assistance)/low-temperature pump
Sample Stage Heating Temperature
Room Temperature to 1200℃±1℃ (PID Control)
Sample Rotation Speed
2 ～ 20 revolutions per minute (infinitely adjustable)
Gas Ionization Source
1 to 2 sets (Nitrogen)
Solid Source Furnace
3 to 10 sets (configured according to user needs)
RHEED
1 set
Experimental MBE (Single Substrate)
Equipment Components
Ultra-high Vacuum Linear Electron Gun
Independently developed linear electron gun, meeting the requirements for ultra-high vacuum and source furnace flange interface and installation dimensions; can be used for heating evaporation of high-temperature refractory materials.
Ultra-high Vacuum Linear Electron Gun
High-Energy Diffraction Gun and Power Supply
Beam spot 0.6mm, high voltage 25kV.
The beam spot can be diffracted on the screen, and the image is captured by a CCD camera and processed by a computer.
Production MBE (Large Size Single Substrate, Multiple Small Size)
Process Implementation
Using the molecular beam epitaxy equipment independently developed by Pengcheng Semiconductor to grow Bi2-xSbxTe.3。
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Contact: Miss Dai
Address: 1704, Building 1, Chongwen Park, Nanshan Zhiyuan, 3370 Liuxian Avenue, Nanshan District, Shenzhen City, Guangdong Province
Shenyang Office Address: Shenyang University Science Park, No.15 Wanghua South Street, Dadong District, Shenyang City, Liaoning Province
Telephone:13632750017
E-mail:sales@hitsemi.com
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