Ultra-High Vacuum High-Energy Pulsed Magnetron Sputtering Coating System (HITSemi-UHV-HIPIMS)
Ultra-high vacuum, high-energy pulsed magnetron sputtering coating equipment utilizes nanoscale and atomic‑level manufacturing technologies in an ultra‑clean environment to grow high‑purity, high‑quality thin films. One application scenario is the growth of GaN single crystal thin films and the realization of processes for preparing GaN‑based dilute magnetic semiconductor molecular structure materials.
- Product Description
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Ultra-high vacuum, high-energy pulsed magnetron sputtering coating equipment utilizes nanoscale and atomic‑level manufacturing technologies in an ultra‑clean environment to grow high‑purity, high‑quality thin films. One application scenario is the growth of GaN single crystal thin films and the realization of processes for preparing GaN‑based dilute magnetic semiconductor molecular structure materials.
The equipment consists of a process chamber, a pre‑processing chamber, a glove box, a sample transfer mechanism, a vacuum deposition system, an electrical control system, and RHEED and other measurement and inspection systems. It can perform processes such as wafer cleaning, epitaxial wafer and dilute magnetic semiconductor film deposition, post‑deposition film treatment, and protective packaging all within a cleanroom environment.
Main Features
Achieve plasma sputtering epitaxy under ultra-high vacuum and ultra-clean conditions.
Electron beam testing methods integrated with atomic‑level probing enable ultra‑high vacuum PSD epitaxial studies of atomic‑level physical properties (including the formation mechanisms and kinetic laws of atomic‑level defects).
Precisely control the plasma sputter epitaxial growth process of third‑generation semiconductors—at this project, GaN thin films are used as the verification platform—from the atomic scale.Preprocessing Room
High-vacuum background, used for applications such as plasma cleaning of sample surfaces, high-temperature degassing, and diffusion and annealing of samples after coating. The chamber’s door is connected to a glove box, facilitating sample loading while also aiding in the cleaning of the pre‑processing chamber. The chamber is equipped with a set of manual sample transfer rods for moving samples between the pre‑processing chamber and the process chamber.Preprocessing Room Technical Parameters
Ultimate vacuum 2×10 -5 Pa Work vacuum 5×10 -4 Pa Sample diameter Φ4 inches Sample heating temperature Room temperature to 600°C Temperature control accuracy ±1℃ Ion source aperture Φ50mm Distance between the ion source and the sample plane 200mm Ion energy 5 eV ~ 200 eV Sample rod transmission distance 900mm Fork lift height adjustment distance 10 mm Workshop
Ultra-high vacuum background provides an ideal clean environment for the growth of thin film materials.
The film deposition process employs self‑designed ultra‑high vacuum liquid magnetron sputtering targets and ultra‑high vacuum solid magnetron sputtering targets (during operation, the vacuum chamber maintains a vacuum level of 10…). -1 Pa or below) (or a beam source furnace), equipped with a gas ionization source, can be configured in various source combinations to achieve… GaN, p/n ) ( AlN, p/n ) ( AlGaN ) Preparation of such film layers.
The workshop is equipped with:
▶ One set of φ4-inch high-temperature sample stage; the sample can be rotated at 2–20 rpm, continuously adjustable, with a heating temperature range from room temperature to 1200°C (temperature control accuracy: ±1°C).
▶ A set of 2-inch liquid magnetic sputtering targets, used for the sputtering of Ga target material.
▶ Two sets (or beam source furnaces) of 2-inch ultra-high vacuum magnetron sputtering targets, used for… Al, C, Mg, Ge, Si Target material sputtering (or high-temperature preparation of various elemental materials using a beam source furnace).
▶ Two RF ionization sources are used for the ionization of N sources.
▶ One RHEED in-situ measurement system.Technical Parameters of the Process Room
Ultimate vacuum 2×10 -7 Pa Work vacuum 5×10 -6 Pa Sample diameter Φ4 inches Sample heating temperature Room temperature to 1200°C Temperature control accuracy ±1℃ Sample rotation speed 0–20 RPM (continuously adjustable online) Sputtering target sputtering surface and sample
Adjustment distance of the plane.
Liquid Source Sputtering Target: 75 mm–150 mm (Offline Adjustment) Primary sputtering target: 75 mm–150 mm (offline adjustment) Doping Source Target: 75mm–150mm (Offline Adjustment) Power Supply Control Stability <1% Film Thickness Monitoring Accuracy 0.3 Å Operating Conditions of the Equipment
Power Supply Three-phase five-wire system, AC 380V, 50Hz; grounding resistance ≤ 1Ω. Power Configure according to specific process requirements. Cooling water ≤100 L/min Water pressure 0.1 MPa ~ 0.15 MPa Water temperature 18°C–25°C Pneumatic component supply pressure 0.5 MPa to 0.7 MPa Gas Supply Pressure for Mass Flow Controllers 0.05 MPa to 0.2 MPa Operating temperature 10°C–40°C Work environment humidity ≤50% 
Ultra-High Vacuum Magnetron Sputtering Target
Glow Phenomena in Sputtering of Different Target Materials Using Ultra-High Magnetic Sputtering Targets
The sample stage in the process room is heated to 1200℃.
Sputtering Process
Device Main View
Rear view of the device
Top view of the device
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Contact: Miss Dai
Address: 1704, Building 1, Chongwen Park, Nanshan Zhiyuan, 3370 Liuxian Avenue, Nanshan District, Shenzhen City, Guangdong Province
Shenyang Office Address: Shenyang University Science Park, No.15 Wanghua South Street, Dadong District, Shenyang City, Liaoning Province
Telephone:13632750017
E-mail:sales@hitsemi.com
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