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Production-type TGV/TSV/TMV high-vacuum magnetron sputtering coating machine

Production-grade TGV/TSV/TMV high-vacuum magnetron sputtering coating system (Sputter-2000W series): This equipment is used for depositing metal seed layers on glass substrates and ceramic substrates, enabling high-density through-holes and blind vias with a depth-to-diameter ratio exceeding 10:1.

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  • Product Description
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    Production-grade TGV/TSV/TMV High-Vacuum Magnetron Sputtering Coating System (Sputter-2000W Series) This equipment is used for depositing metal seed layers on high-density through-holes and blind holes in glass substrates and ceramic substrates, with aspect ratios exceeding 10:1. For example, it enables the deposition of Cu/Ti microstructures during substrate coating processes and dual-layer films of Au/TiW transmission lines, thereby providing critical support for enhancing the integration density of microsystems.

    Advantages of this equipment: The film layer exhibits high uniformity and repeatability, with strong adhesion. The equipment features programmable, automated control based on the process formulation.
    Equipment Structure and Performance Parameters
    - Single-coating chamber, dual-coating chamber, multi-chamber coating chamber
    - Horizontal structure, vertical structure
    - Sample transfer: linear type
    - Number and type of magnetron sputtering targets: multiple rectangular magnetron targets
    - Magnetron sputtering targets: compatible with DC, RF, intermediate frequency, and high-energy pulsed modes
    - The substrate is heatable, liftable, and can be biased.
    - By introducing reaction gases, reactive sputtering deposition can be performed.
    - Operation modes: manual, semi-automatic, fully automatic
    - Substrate holder: Configured according to substrate size
    - Substrate sizes: 2, 4, 6, 8, and 10 inches, as well as customer-specified dimensions.
    - Maximum vacuum level in the sample introduction/extraction chamber: ≤8×10⁻⁸ Pa -5 Pa
    - Working background vacuum level in the sample entry/exit chamber: ≤2×10 -3 Pa
    - Ultimate vacuum of the coating chamber: 5 × 10 -5 Dad,
     Working background vacuum level: 8 × 10 -4 Pa
    - Film layer uniformity: <5% (in-wafer), <5% (inter-wafer)
    - Overall leakage rate of the equipment: Vacuum level ≤ 10 Pa after 12 hours of shutdown.


    Working conditions

    Type Parameter Note
    Power supply ~380V Three-phase five-wire system
    Power Configure according to device scale  
    Coolant circulation Configure according to device scale  
    Water pressure 1.0–1.5 × 10 5 Pa  
    Cooling capacity Configure according to heat dissipation.  
    Water temperature 18–25℃  
    Pneumatic component supply pressure 0.5 MPa to 0.7 MPa  
    Gas supply pressure for the mass flow controller 0.05 MPa to 0.2 MPa  
    Working environment temperature 10℃ to 40℃  
    Work environment humidity ≤50%  

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