Production-type TGV/TSV/TMV high vacuum magnetron sputtering coating machine
The production-type TGV/TSV /TMV high vacuum magnetron sputtering coating machine (Sputter-2000W series) is used for coating high-density through holes and blind holes on glass substrates and ceramic substrates, with a depth-to-diameter ratio greater than 10:1.
- Product Description
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Production-type TGV/TSV/TMV High Vacuum Magnetron Sputtering Coating Machine (Sputter-2000W Series)This equipment is used for coating high-density through holes and blind holes on glass substrates and ceramic substrates, with a depth-to-diameter ratio >10:1. For example: used for substrate coating processes of Cu/Ti microstructures, Au/TiW transmission wire dual-system film deposition capability, providing support for the increase in micro-system integration density.
Advantages of this equipment: high uniformity and repeatability of the film layer, strong adhesion of the film layer, and programmable automated control based on process formulas.
Equipment structure and performance parameters
- Single coating chamber, double coating chamber, multi-chamber coating chamber- Horizontal structure, vertical structure
- Linear type, cluster type
- Sample transfer: linear type, circumferential type
- Number and type of magnetron sputtering targets: multiple rectangular magnetron targets
- Magnetron sputtering targets: compatible with DC, RF, medium frequency, and high-energy pulse
- Substrate can be heated, lifted, and biased
- Reactive gases can be introduced for reactive sputtering coating
- Operating modes: manual, semi-automatic, fully automatic
- Substrate holder: configured according to substrate size
- Substrate sizes: 2, 4, 6, 8, 10 inches and customer-specified sizes
- Maximum vacuum degree of the sample inlet/outlet chamber: ≤8X10-5Pa
- Working background vacuum degree of the sample inlet/outlet chamber: ≤2X10-3Pa
- Maximum vacuum degree of the coating chamber: 5X10-5Pa,
Working background vacuum degree: 8X10-4Pa
- Film layer uniformity: <5% (within the wafer), <5% (between wafers)
- Overall leakage rate of the equipment: vacuum degree ≤10Pa after 12 hours of shutdown
Working conditions
Type
Parameters
Remarks
Power supply ~380V Three-phase five-wire system
Power Configured according to equipment scale Cooling water circulation Configured according to equipment scale Water pressure 1.0~1.5×105Pa Cooling capacity Configured according to heat dissipation Water temperature 18~25℃ Pneumatic component supply pressure 0.5MPa~0.7MPa Mass flow controller supply pressure 0.05MPa~0.2MPa Working environment temperature 10℃~40℃ Working environment humidity ≤50%
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