The TGV glass through-hole technology has achieved a significant breakthrough, and its application prospects continue to expand.


Release time:

2026-01-05

Recently, TGV (Through Glass Via) technology has made significant strides in the fields of materials processing and micro- and nano-manufacturing, drawing considerable attention from the semiconductor, advanced packaging, and emerging electronic device industries. With its outstanding electrical performance, high-frequency characteristics, and three-dimensional integration capabilities, TGV is emerging as one of the key technologies for next-generation high-density interconnects.

Recently, TGV (Through Glass Via) technology has made significant strides in the fields of materials processing and micro- and nano-manufacturing, drawing considerable attention from the semiconductor, advanced packaging, and emerging electronic device industries. With its outstanding electrical performance, high-frequency characteristics, and three-dimensional integration capabilities, TGV is emerging as one of the key technologies for next-generation high-density interconnects.

I. Technological Advancements
TGV technology constructs three-dimensional electrical interconnects by fabricating high aspect-ratio vertical vias on glass substrates and then metallizing these vias to achieve electrical connectivity. Recently, the research team has achieved key breakthroughs in the following areas:

Micrometer-level high-precision machining Using advanced processes such as laser-induced and wet/dry etching, we have successfully fabricated through-hole structures with aperture sizes ≤20 μm and aspect ratios >10:1.
Improved borehole quality The smoothness of the through-hole inner wall has been significantly improved, effectively reducing the defect rate of subsequent metal deposition.
Glass substrate strengthening By optimizing the composition and employing advanced heat treatment processes, we enhance the mechanical strength and thermal stability of glass to meet the demands of stringent application scenarios.
The metallization process is mature. : Combine Magnetron sputtering and electroplating technologies to achieve highly reliable copper filling and low-resistance interconnections.
II. Core Application Areas
Advanced Packaging and 3D Integration

As a low-cost alternative to silicon through-holes (TSV), TGV is widely used in 3D packaging applications such as RF front-end modules, MEMS sensors, and optoelectronic integration. It is particularly well-suited for millimeter-wave communications and high-frequency devices.
Radio Frequency and Millimeter-Wave Devices

Glass materials offer advantages such as low dielectric constant and low loss factor. The TGV structure can effectively reduce signal crosstalk and enhance the performance of 5G/6G communication modules.
Optoelectronics and Optoelectronic Integration

In optical waveguides, LiDAR, and AR/VR optical modules, TGV can be used to achieve optoelectronic co-integration, enabling high-density heterogeneous integration.
Aerospace and High-End Sensing

Thanks to its excellent airtightness, thermal stability, and electromagnetic transparency, TGV glass substrates are suitable for high-reliability spacecraft payloads, inertial navigation systems, and vacuum-packaged MEMS devices.
Emerging exploration directions

Currently, research institutions are actively exploring the potential of TGV in cutting-edge fields such as bio-microfluidic chips, quantum device packaging, and flexible electronic substrates.
III. Future Outlook
With the advancement of glass substrate standardization, upgrades to laser and etching equipment, and optimization of metallization processes, TGV technology is poised to further reduce manufacturing costs and improve yield rates. Meanwhile, by deeply integrating with advanced packaging trends such as Chiplet and heterogeneous integration, TGV technology will accelerate its industrialization in applications including AI chips, high-speed interconnects, and intelligent sensing.

It is foreseeable that TGV glass via technology will play a pivotal role in the future development of miniaturization, high frequency, and multi-functionality in electronic systems, providing crucial support for the next-generation information technology infrastructure.

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