Production-type TGV/TSV-Pengcheng Semiconductor Technology (Shenzhen) Co., Ltd.

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Production-type TGV/TSV

Release time:

2024-12-27

The production-type TGV/TSV high vacuum magnetron sputtering coating machine is used for coating high-density through holes and blind holes on glass substrates and ceramic substrates, with a depth-to-diameter ratio greater than 10:1. For example, it is used for the substrate coating process of Cu/Ti microstructures and the deposition capability of Au/TiW transmission line dual system films, providing support for the enhancement of micro-system integration density.

Production-type TGV/TSV high vacuum magnetron sputtering coating machineThis equipmentis used forglass substratesandceramic substratesforhigh-density through holesand blind holes coating, with a depth-to-diameter ratio >10:1. For example: used for substrate coating processes such as Cu/Ti microstructures and Au/TiW transmission line dual system film layer deposition capabilities, providing support for the increase in micro-system integration density.

Equipment advantages: high uniformity and repeatability of the film layer, strong adhesion of the film layer, and programmable automated control based on process formulas.

Equipment structure and performance parameters

- Single coating chamber, double coating chamber, multi-chamber coating chamber

- Horizontal structure, vertical structure

- Linear type, cluster type

- Sample transfer: linear type, circumferential type

- Number and type of magnetron sputtering targets: multiple rectangular magnetron targets

- Magnetron sputtering targets: compatible with DC, RF, medium frequency, and high-energy pulse

- Substrate can be heated, lifted, and biased

- Reactive gases can be introduced for reactive sputtering coating

- Operating modes: manual, semi-automatic, fully automatic

- Substrate holder: configured according to substrate size

- Substrate sizes: 2, 4, 6, 8, 10 inches and customer specified sizes

- Limit vacuum degree of the sample inlet/outlet chamber: ≤8X10^-5Pa

- Working background vacuum degree of the sample inlet/outlet chamber: ≤2X10^-3Pa

- Limit vacuum degree of the coating chamber: 5X10^-5Pa,

working background vacuum degree: 8X10^-4Pa

- Film layer uniformity: <5% (within wafer), <5% (between wafers)

- Overall leakage rate of the equipment: vacuum degree ≤10Pa after shutdown for 12 hours

News Center

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Thin film deposition equipment

Thin film deposition equipment classification Thin film deposition refers to the deposition of thin film materials to be processed on substrates such as silicon wafers. The deposited thin film materials are mainly non-metals such as silicon dioxide, silicon nitride, and polysilicon, as well as metals such as copper. The deposited films can be amorphous, polycrystalline, or single crystal.

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Contact: Miss Dai
Address: 1704, Building 1, Chongwen Park, Nanshan Zhiyuan, 3370 Liuxian Avenue, Nanshan District, Shenzhen City, Guangdong Province

Shenyang Office Address: Shenyang University Science Park, No.15 Wanghua South Street, Dadong District, Shenyang City, Liaoning Province
Telephone:13632750017
E-mail:sales@hitsemi.com

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