TSV Technology: A Core Pillar of AI Computing Power
Release time:
2026-07-01
The explosive growth of ChatGPT and multimodal large models has made AI computing power the most closely watched central topic in the tech industry. As the computational capacity of AI chips grows exponentially, a key bottleneck is becoming increasingly apparent: the processing speed of compute units far outpaces the data‑transfer rate of memory, causing vast amounts of computing power to sit idle while waiting for data and reducing overall utilization—a phenomenon commonly referred to as the “memory wall.” To unblock the critical data‑transfer pathways within AI chips and sustain further leaps in computing performance, we need breakthroughs in the underlying foundational technologies embedded at the chip level— TSV silicon through-silicon via 。
What is TSV?
TSV stands for Through-Silicon Via. , translated into Chinese as Through-Silicon Via Technology In simple terms, it creates vertical vias in the silicon wafer and fills them with conductive material, thereby establishing a high-density, vertical electrical interconnect between the top and bottom surfaces of the wafer, enabling inter-chip connectivity. It is… 2.5D/3D packaging One of the key process technologies.
Traditional planar wiring in chips forces signals and data to snake along two-dimensional “roads,” resulting in slow transmission, congestion, and high power consumption. In contrast, TSV technology is like building countless vertical elevators inside the chip, enabling signals to pass directly through the silicon wafer and connect between layers. This drastic reduction in interconnect distances—from the millimeter scale down to the micrometer scale—not only significantly lowers transmission latency but also achieves higher interconnect density and lower power consumption, making it currently… 3D chip interconnects The core technical solution. TSV technology has been widely adopted across various fields, such as… CIS (CMOS image sensor) and 3D IC stacked packaging Wait.
Why is TSV said to underpin AI computing power?
The training and inference of large AI models are, at their core, high‑speed computations and throughput operations on massive datasets, placing stringent demands on memory bandwidth. Without… High-Bandwidth Memory HBM Even with exceptionally powerful GPU computing capabilities, insufficient data supply can lead to underutilization, resulting in significant computational resources being wasted.
At the heart of HBM’s performance breakthrough lies TSV technology. By leveraging a 3D‑stacked architecture, HBM simultaneously achieves both high bandwidth and large capacity, with TSV serving as the critical interconnect backbone of this stacked design: it creates micron‑scale vertical conductive vias in silicon wafers, enabling multiple layers of DRAM chips to be vertically stacked and electrically interconnected with exceptional efficiency. This vertical interconnection dramatically reduces signal‑transmission distances between stacked dies, while advanced packaging techniques tightly integrate memory with compute units, delivering higher channel density and faster data rates—precisely the optimal solution for overcoming the “memory wall” bottleneck in AI accelerators.
Pengcheng Semiconductor’s production‑grade TGV/TSV/TMV high‑vacuum magnetron sputtering coating system
Future Outlook
The evolution of AI is far from over; each leap in computing power places ever more demanding requirements on TSV technology. Pengcheng Semiconductor Technology (Shenzhen) Co., Ltd. (hereinafter referred to as “…”) Pengcheng Semiconductor “With deep, long-term expertise in micro‑ and nano‑technologies and high‑end precision manufacturing, we continuously advance key areas such as TSV‑based advanced packaging, striving to provide the semiconductor industry with reliable technological and equipment support and to forge robust vertical interconnect pathways that underpin AI computing power. Backed by a solid foundation of cutting‑edge process technologies, we will keep driving the evolution of computing performance, injecting sustained momentum into the high‑quality development of China’s semiconductor sector.”
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