PECVD: Plasma-Enhanced Chemical Vapor Deposition
The PECVD plasma-enhanced chemical vapor deposition equipment is primarily used for growing thin films of silicon nitride and silicon oxide in a clean, vacuum environment. Utilizing single-frequency or dual-frequency plasma-enhanced chemical vapor deposition technology, this equipment represents an ideal process for depositing high-quality thin films of silicon nitride, silicon oxide, and other materials.
- Product Description
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The PECVD plasma-enhanced chemical vapor deposition equipment is primarily used for growing thin films of silicon nitride and silicon oxide in a clean, vacuum environment. Utilizing single-frequency or dual-frequency plasma-enhanced chemical vapor deposition technology, this equipment represents an ideal process for depositing high-quality thin films of silicon nitride, silicon oxide, and other materials.
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Contact: Miss Dai
Address: 1704, Building 1, Chongwen Park, Nanshan Zhiyuan, 3370 Liuxian Avenue, Nanshan District, Shenzhen City, Guangdong Province
Shenyang Office Address: Shenyang University Science Park, No.15 Wanghua South Street, Dadong District, Shenyang City, Liaoning Province
Telephone:13632750017
E-mail:sales@hitsemi.com
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