MOCVD Metal Organic Chemical Vapor Deposition Equipment
- Product Description
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MOCVD Metal Organic Chemical Vapor Deposition Equipment
It can be used for epitaxial growth of GaN, ZnO, etc.
The transportation of materials adopts an ultra-pure gas path system, and the switching and input of sources adopts a multi-channel combined valve intake technology. Since the combination valve has a very small dead space, the residual amount of the source is very small, which is beneficial to the growth of materials with steep interfaces.
The pressure difference control technology is used to control the pressure between the bypass of the combined valve and the main circuit, which greatly reduces the pressure and concentration fluctuation of the source, and is conducive to the repeatability and stability of material growth.
The pipeline mosaic type inlet nozzle is used to make the reaction source evenly mixed and react on the surface of the substrate, which greatly reduces the occurrence of pre-reaction.
Using resistance type rapid temperature rise and fall heating furnace.
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