High-Vacuum Magnetron Sputtering Coating Equipment (Circular Planar Target, Cabinet-Type Integrated Machine) HITSemi-PVD-460SC
High-vacuum magnetron sputtering coating equipment primarily employs circular magnetron sputtering targets to deposit metal, alloy, compound, semiconductor, ceramic, dielectric composite films, and other chemically reactive films. It is suitable for depositing various single-layer films, multilayer films, doped films, and alloy films, and can be used to coat both magnetic and non-magnetic materials. It can also be utilized in the R&D of advanced packaging technologies such as TGV/TSV/TMV, enabling the deposition of deep-hole metal seed layers with high aspect ratios (≥10:1).
- Product Description
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High-vacuum magnetron sputtering coating equipment primarily employs circular magnetron sputtering targets to deposit metal, alloy, compound, semiconductor, ceramic, dielectric composite films, and other chemically reactive films; it is suitable for depositing various single-layer films, multi‑layer films, doped films, and alloy films, and can be used to coat both magnetic and non‑magnetic materials.
It can also be used for the R&D of advanced packaging for TGV/TSV/TMV, enabling deep-hole metal seed layer plating with high aspect ratios (≥10:1).
Key Features
The distance between the substrate and the target material is adjustable to meet the deposition process requirements of different target materials.
The magnetron sputtering target head features adjustable angles, allowing for precise control to ensure uniformity across substrates of different sizes.
The process gas utilizes gas distribution technology, resulting in a more uniform gas field and more even coating.
The sample stage can be equipped with a biasing device, which can be used for deep-hole coating and allows for precise control of coating quality.Technical Parameters
Product Model HITSemi-PVD-460SC Substrate size 4"~8" Magnetic Target Size 2"~6" Number of Magnetron Sputtering Targets 1–3 circular flat targets Cavity material 304/316 (optional) stainless steel, electropolished Vacuum System Molecular pump + mechanical pump (optional, dry pump) Ultimate vacuum 5X10 -5 Pa Restore work background vacuum Atmospheric up to 7×10 -4 Pa, about 30 minutes (new equipment is filled with dry nitrogen). Overall Device Leakage Rate Shut down for 12 hours with a vacuum level ≤ 8 Pa. Sputtering direction From bottom to top / From top to bottom (as specified by the user) Sputtering Method Single-target sputtering, multi-target sequential sputtering, multi-target co-sputtering Process Power Supply RF power supply, intermediate frequency power supply, HIPIMS high‑energy pulsed power supply, DC pulsed power supply, DC sputtering power supply Substrate stage The substrate stage is capable of heating up to 600°C, rotating at 2–30 rpm, moving up and down, and being water‑cooled (optional). Film thickness uniformity Better than ±3% Control Form Semi-automatic / Fully automatic Process gas Route 3 (N 2 , Ar, O 2 ) Substrate Stage Bias Optional Plasma Cleaning Source Optional Film Thickness Monitoring Optional Constant-temperature chilled water tank Optional Air compressor Optional Operating Conditions of the Equipment
Power Supply Three-phase five‑wire system, AC 380V, 50Hz; grounding resistance ≤ 1Ω. Power Configure according to the equipment scale, with a peak power of 5 kW to 10 kW. Cooling water ≤100 L/min Water pressure 0.1 MPa ~ 0.15 MPa Water temperature 18°C–25°C Pneumatic component supply pressure 0.5 MPa to 0.7 MPa Gas Supply Pressure for Mass Flow Controllers 0.05 MPa to 0.2 MPa Operating temperature 10°C–40°C Work environment humidity ≤50%
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