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High-Vacuum Magnetron Sputtering Coating Equipment (Rectangular Target) HITSemi-PVD-650SR

High-vacuum magnetron sputtering coating equipment primarily employs rectangular magnetron sputtering targets to deposit metal, alloy, compound, semiconductor, ceramic, dielectric composite films, and other chemically reactive films; it is suitable for depositing various single-layer films, multi‑layer films, doped films, and alloy films, and can be used to coat both magnetic and non‑magnetic materials.

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  • Product Description
  • High-vacuum magnetron sputtering coating equipment primarily employs rectangular magnetron sputtering targets to deposit metal, alloy, compound, semiconductor, ceramic, dielectric composite films, and other chemically reactive films; it is suitable for depositing various single-layer films, multi‑layer films, doped films, and alloy films, and can be used to coat both magnetic and non‑magnetic materials.
    It can also be used for the R&D of advanced packaging for TGV/TSV/TMV, enabling deep-hole metal seed layer plating with high aspect ratios (≥10:1).

    Key Features
    Multi‑functional: Supports coating on substrates of various shapes, including flat surfaces, cylindrical objects, bowl‑shaped components, and fairings.
    The distance between the substrate and the target material is adjustable to meet the deposition process requirements of different target materials.
    The process gas utilizes gas distribution technology, resulting in a more uniform gas field and more even coating.
    The sample stage can be equipped with a biasing device, enabling deep-hole coating and allowing for precise control of coating quality.

    Technical Parameters

    Product Model HITSemi-PVD-650SR
    Substrate size Planar rectangular substrate: ≤350mm × 120mm; single load capacity: 4 pieces.
    Mode of movement: Revolution, or fixed positioning.
    Cylindrical workpieces: ≤φ150×350mm; single-load capacity: 4 pieces.
    Movement: Revolution + Rotation, or Rotation with a Fixed Orientation
    Round substrate: ≤φ100mm; Single loading capacity: 1 piece
    Mode of motion: Only rotation.
    Target material size Rectangular magnetron target: 400mm x 100mm
    Circular Magnetron Target: φ3 inches
    Number of Magnetron Sputtering Targets 2–4 units (optional)
    Applicable Materials Metals, insulating materials, and ferromagnetic materials are all applicable.
    Cavity material 304/316 (optional) stainless steel, electropolished
    Vacuum System Molecular pump + dry pump unit
    Ultimate vacuum 8.0X10 -5 Pa
    Restore work background vacuum Atmospheric up to 8.0×10 -4 Pa, about 30 minutes (new equipment is filled with dry nitrogen).
    Overall Equipment Failure Rate Shut down for 12 hours with a vacuum level ≤ 8 Pa.
    Sputtering Method Single sputtering
    Process Power Supply RF power supply, intermediate frequency power supply, HIPIMS high‑energy pulsed power supply, DC pulsed power supply, DC sputtering power supply
    Substrate Stage Heating Temperature 100mm substrate worktable, with a maximum heating temperature of approximately 600°C.
    Other worktables can be heated to a maximum temperature of approximately 300°C.
    Multi‑functional Workbench Rotatable, heatable, and bias‑adjustable.
    Film thickness uniformity Planar substrates are superior to ±3%, while the tolerance for non‑rectangular substrates will be determined based on their specific shapes.
    Control Form Semi-automatic / Fully automatic
    Process gas Route 3 (N 2 , Ar, O 2 )
    Substrate Stage Bias Optional
    Plasma Cleaning Source Optional
    Film Thickness Monitoring Optional
    Constant-temperature chilled water tank Optional
    Air compressor Optional

    Operating Conditions of the Equipment

    Power Supply Three-phase five-wire system, AC 380V, 50Hz; grounding resistance ≤ 1Ω.
    Power Peak power (10 kW–80 kW), configured according to equipment scale.
    Cooling water ≤100 L/min
    Water pressure 0.1 MPa ~ 0.15 MPa
    Water temperature 18°C–25°C
    Pneumatic component supply pressure 0.5 MPa to 0.7 MPa
    Gas Supply Pressure for Mass Flow Controllers 0.05 MPa to 0.2 MPa
    Operating temperature 18°C–40°C
    Work environment humidity ≤50%

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