High-Vacuum Magnetron Sputtering Coating Equipment (Rectangular Target) HITSemi-PVD-650SR
High‑vacuum magnetron sputtering coating equipment primarily employs a rectangular magnetron sputtering target to deposit metallic, alloy, compound, semiconductor, ceramic, dielectric composite films, and other chemically reactive coatings. It is suitable for fabricating single‑layer, multilayer, doped, and alloy films, and can coat both magnetic and nonmagnetic materials.
- Product Description
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High‑vacuum magnetron sputtering coating equipment primarily employs a rectangular magnetron sputtering target to deposit metallic, alloy, compound, semiconductor, ceramic, dielectric composite films, and other chemically reactive coatings. It is suitable for fabricating single‑layer, multilayer, doped, and alloy films, and can coat both magnetic and nonmagnetic materials.
It can also be used for R&D in advanced packaging for TGV/TSV/TMV, enabling plating of metal seed layers in deep vias with high aspect ratios (≥10:1).
Key Features
Multi‑purpose, supporting coating of substrates with various shapes, including flat surfaces, cylindrical bodies, and bowl‑shaped or shroud‑type structures.
The distance between the substrate and the target can be adjusted to meet the process‑specific spacing requirements of different target materials.
The process gas employs uniform‑gas technology, resulting in a more even gas distribution and more uniform coating.
The sample stage can be equipped with a biasing unit, enabling deep‑hole coating and allowing for precise control of coating quality.Technical Specifications
Product model HITSemi-PVD-650SR Substrate size Planar rectangular substrate: ≤350 mm × 120 mm; single‑load capacity: 4 substrates.
Movement type: revolution, or single-point positioning
Cylindrical workpiece: ≤φ150×350mm; Single‑load capacity: 4 pieces
Motion mode: revolution plus rotation, or single-point rotational positioning.
Circular substrate: ≤φ100mm; Single‑load capacity: 1 piece
Movement mode: Self-rotation onlyTarget size Rectangular magnetron target: 400 mm x 100 mm
Circular magnetron target: φ3 inchesNumber of magnetron sputtering targets 2 to 4 units (optional) Applicable Materials Metals, insulating materials, and ferromagnetic materials are all acceptable. Cavity material 304/316 (optional) stainless steel, electropolished Vacuum system Molecular pump + dry pump unit Ultimate vacuum 8.0X10 -5 Pa Restore background vacuum for work Atmospheric up to 8.0×10 -4 Pa, approximately 30 minutes (new equipment filled with dry nitrogen) Overall equipment omission rate After 12 hours of shutdown, the vacuum level is ≤8 Pa. Sputtering method Single sputtering Process power supply RF power supply, intermediate-frequency power supply, HIPIMS high-energy pulsed power supply, DC pulsed power supply, DC sputtering power supply Substrate stage heating temperature φ100mm substrate worktable, with a maximum heating temperature of approximately 600℃.
Other workpiece stages can be heated to a maximum temperature of approximately 300°C.Multi-functional workbench Rotatable, heatable, and biasable Film thickness uniformity Flat substrates are better than ±3%; for irregularly shaped substrates, the tolerance depends on the specific geometry. Control mode Semi-automatic/Automatic Process gas Route 3 (N 2 , Ar, O 2 ) Substrate stage bias voltage Optional Plasma cleaning source Optional Film thickness monitoring Optional Constant-temperature chilled water tank Optional Air compressor Optional Operating conditions of the equipment
Power supply Three-phase five-wire system, AC 380 V, 50 Hz; grounding resistance ≤ 1 Ω. Power Configured according to equipment size, with a peak power ranging from 10 kW to 80 kW. Cooling water ≤100 L/min Water pressure 0.1 MPa~0.15 MPa Water temperature 18℃～25℃ Pneumatic component supply pressure 0.5 MPa to 0.7 MPa Gas supply pressure of the mass flow controller 0.05 MPa to 0.2 MPa Operating ambient temperature 18℃～40℃ Work environment humidity ≤50%
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Telephone:13632750017
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