High-Vacuum Electron Beam Evaporation Coating System HITSemi-PVD-600EB
High-vacuum electron-beam evaporation coating equipment utilizes an electron beam to bombard and heat materials, causing them to evaporate under high-vacuum conditions, thereby depositing various metal, oxide, conductive film, optical film, semiconductor film, ferroelectric film, and ultra‑hard film coatings onto substrates. It can be used to deposit single-layer, multi‑layer, or doped films of mixed materials, and is capable of coating a wide range of high‑melting‑point materials.
- Product Description
-
High-vacuum electron-beam evaporation coating equipment utilizes an electron beam to bombard and heat materials, causing them to evaporate under high-vacuum conditions, thereby depositing various metal, oxide, conductive film, optical film, semiconductor film, ferroelectric film, and ultra‑hard film coatings onto substrates. It can be used to deposit single-layer films, multilayer films, or doped films, and is capable of coating a wide range of high-melting-point materials.
Key Features
High vacuum level, fast pumping speed, and convenient substrate loading and unloading.
Equipped with an E‑type electron beam evaporation source and a resistive evaporation source.
PID automatic temperature control ensures uniform film formation, minimal gas release, and even temperature distribution.Technical Parameters
Product Model HITSemi-PVD-600EB Substrate size 4"~8" Electron Beam Evaporation Source Maximum power: 10 kW, E‑type electron gun Number of crucibles 4 holes/6 holes (optional) Resistive Thermal Evaporation Source Assembly 1–2 units (optional)
Tantalum (tungsten or molybdenum) metal boat thermal evaporation source assembly
Tungsten electrode or tungsten blue thermal evaporation source assemblyCavity material 304/316 (optional) stainless steel, electropolished Vacuum System Molecular pump + mechanical pump Ultimate vacuum 5×10 -5 Pa Restore work background vacuum Atmospheric up to 7×10 -4 Pa, about 30 minutes (new equipment is filled with dry nitrogen). Overall Equipment Failure Rate Shut down for 12 hours with a vacuum level ≤ 8 Pa. Process Power Supply Electron gun power supply, DC vaporization power supply Substrate stage The substrate stage is capable of heating up to 600°C, rotating at 2–30 rpm, moving up and down, and being water‑cooled (optional). Film thickness uniformity Better than ±5% Control Form Semi-automatic / Fully automatic Process gas Route 3 (N 2 , Ar, O 2 ) (Optional) Plasma Cleaning Source Optional Film Thickness Monitoring Optional Constant-temperature chilled water tank Optional Air compressor Optional Operating Conditions of the Equipment
Power Supply Three-phase five‑wire system, AC 380V, 50Hz; grounding resistance ≤ 1Ω. Power Configure according to the equipment scale, with a peak power of 20 kW to 30 kW. Cooling water ≤100 L/min Water pressure 0.1 MPa ~ 0.15 MPa Water temperature 18°C–25°C Pneumatic component supply pressure 0.5 MPa to 0.7 MPa Gas Supply Pressure for Mass Flow Controllers 0.05 MPa to 0.2 MPa Operating temperature 10°C–40°C Work environment humidity ≤50%
Key words:
Get Quote
Related Products
Contact: Miss Dai
Address: 1704, Building 1, Chongwen Park, Nanshan Zhiyuan, 3370 Liuxian Avenue, Nanshan District, Shenzhen City, Guangdong Province
Shenyang Office Address: Shenyang University Science Park, No.15 Wanghua South Street, Dadong District, Shenyang City, Liaoning Province
Telephone:13632750017
E-mail:sales@hitsemi.com
Message