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High-Vacuum Resistive Thermal Evaporation Coating System HITSemi-PVD-420TE

The high-vacuum resistive thermal evaporation coating system employs resistive thermal evaporation technology. Under high-vacuum conditions, it deposits single‑layer or multi‑layer films of various compounds and mixtures onto a substrate by heating the material. It can be used for both physical and chemical research on materials. It is suitable for fabricating metal conductive electrodes, as well as for experiments investigating the physicochemical properties of organic materials, studies on the operating principles of organic semiconductor devices, OLED research and development, and experiments related to organic thin‑film solar cells.

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  • Product Description
  • The high-vacuum resistive thermal evaporation coating system employs resistive thermal evaporation technology. Under high-vacuum conditions, it deposits single‑layer or multilayer films of various compounds and mixtures onto substrates by heating the material.
    It can be used for physical and chemical research on materials. It can be employed in the preparation of metal conductive electrodes; in experiments studying the physicochemical properties of organic materials, experiments exploring the principles of organic semiconductor devices, OLED research, and experiments on organic thin-film solar cells, among others.

    Main Features
    High vacuum level, fast pumping speed, and convenient substrate loading and unloading.
    PID automatic temperature control ensures uniform film formation, minimal gas release, and even temperature distribution.

    Technical Parameters

    Product Model HITSemi-PVD-420TE
    Substrate size 1" ~6"
    Resistive Thermal Evaporation Source 1–4
    Resistive Thermal Evaporation Source Assembly Tantalum (tungsten or molybdenum) metal boat thermal evaporation source assembly
    Quartz Boat Thermal Evaporation Source Assembly
    Tungsten electrode or tungsten blue thermal evaporation source assembly
    Tantalum furnace thermal evaporation source assembly (with boron nitride crucible or ceramic crucible)
    Source Furnace Thermal Evaporation Assembly (with Quartz Crucible or Boron Nitride Crucible)
    Cavity material 304/316 (optional) stainless steel, electropolished
    Vacuum System Molecular pump + mechanical pump
    Ultimate vacuum 5×10 -5 Pa
    Restore work background vacuum Atmospheric up to 7×10 -4 Pa, about 30 minutes (new equipment is filled with dry nitrogen).
    Overall Device Leakage Rate Shut down for 12 hours with a vacuum level ≤ 8 Pa.
    Process Power Supply DC Steam Power Source, Beam Source Furnace Steam Power Source
    Substrate stage The substrate stage is capable of heating up to 600°C, rotating at 2–30 rpm, moving up and down, and being water‑cooled (optional).
    Film thickness uniformity Better than ±5%
    Control Form Semi-automatic / Fully automatic
    Plasma Cleaning Source Optional
    Film Thickness Monitoring Optional
    Constant-temperature chilled water tank Optional
    Air compressor Optional

    Operating Conditions of the Equipment

    Power Supply Three-phase five-wire system, AC 380V, 50Hz; grounding resistance ≤ 1Ω.
    Power Configure according to the equipment scale, with a peak power of 10 kW to 20 kW.
    Cooling water ≤100 L/min
    Water pressure 0.1 MPa ~ 0.15 MPa
    Water temperature 18°C–25°C
    Pneumatic component supply pressure 0.5 MPa to 0.7 MPa
    Gas Supply Pressure for Mass Flow Controllers 0.05 MPa to 0.2 MPa
    Operating temperature 10°C–40°C
    Work environment humidity ≤50%

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