Small Single-Tube LPCVD Low-Pressure Chemical Vapor Deposition Equipment HITSemi-LPCVD-150
The small single-tube LPCVD (Low-Pressure Chemical Vapor Deposition) equipment deposits various functional thin films—primarily Si₃N₄, SiO₂, and polysilicon films—on substrates via chemical vapor deposition under low-pressure, high-temperature conditions. It can be used for scientific research, practical teaching, and the fabrication of small-scale devices.
- Product Description
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Small single-tube LPCVD low-pressure chemical vapor deposition equipment uses chemical reactions in a gas phase to deposit various functional thin films—primarily Si—onto substrates under low-pressure, high-temperature conditions. 3 N 4 , SiO 2 and poly‑silicon thin films). It can be used for scientific research, practical teaching, and the fabrication of small devices.
Key Features
Miniaturization facilitates laboratory operations and use while significantly reducing experimental costs.
The equipment features a horizontal, lying‑down design.
The reaction chamber is made of high‑purity quartz, offering excellent corrosion resistance, anti‑pollution performance, and low leakage rates, making it suitable for high‑temperature applications.
The electrical control section of the equipment employs advanced detection and control systems, ensuring accurate measurements and stable, reliable performance.
The system provides an automatic dust‑control device.Technical Parameters
Product Model HITSemi-LPCVD-150 Substrate Type Irregularly shaped loose wafers and standard substrates with diameters of φ2–φ4 inches. Number of substrates loaded Standard substrates: 1–2 pieces; irregularly sized loose pieces: several. Substrate Placement Method Configure three types of substrate holders: vertical, horizontal, and angled. Vacuum System Mechanical pump, dry pump (optional) Furnace tube Quartz tube, ø150 mm, length 1200 mm Length of the Constant Temperature Zone 300mm Maximum temperature 1100℃ Heating rate 0–50°C/min Temperature control accuracy in the constant temperature zone ≤±1℃ Working pressure range 13 Pa to 1330 Pa Pressure Control Closed-loop inflatable control Film layer uniformity Better than ±5% Slide mounting method Manual sample loading and unloading Process gas SiH 4 , NH 3 , N 2 O, N 2 Constant-temperature chilled water tank Optional Air compressor Optional Note: Does not include an exhaust gas treatment system. Operating Conditions of the Equipment
Power Supply Three-phase five-wire system, AC 380V, 50Hz; grounding resistance ≤ 1Ω. Power Configure according to the equipment scale, with a peak power of 20 kW to 30 kW. Cooling water ≤100 L/min Water pressure 0.1 MPa ~ 0.15 MPa Water temperature 18°C–25°C Pneumatic component supply pressure 0.5 MPa to 0.7 MPa Gas Supply Pressure for Mass Flow Controllers 0.05 MPa to 0.2 MPa Operating temperature 10°C–40°C Work environment humidity ≤50%
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Shenyang Office Address: Shenyang University Science Park, No.15 Wanghua South Street, Dadong District, Shenyang City, Liaoning Province
Telephone:13632750017
E-mail:sales@hitsemi.com
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