LPCVD Equipment HITSemi-LPCVD-200
The LPCVD system is equipped with a dedicated process tube, and process gases—including SiH4, NH3, N2O, N2, and Ar—are individually supplied. By using a vacuum pump to achieve low pressure, the system enables the deposition of silicon nitride, silicon oxide, and polycrystalline silicon films. The equipment is primarily used in research institutions, universities, and industrial and mining enterprises for both experimental purposes and small‑scale production.
- Product Description
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The LPCVD equipment is equipped with a dedicated process tube, and the process gases are individually configured for SiH. 4/NH3/N2O/N2 /Ar, low pressure is achieved via a vacuum pump to enable the deposition of silicon nitride, silicon oxide, and polycrystalline silicon films.
The equipment is primarily used in research institutions, universities, and industrial and mining enterprises for experimental purposes and small‑batch production.
Main Features
The furnace chamber features excellent temperature uniformity and ensures a stable process temperature zone.
High temperature control accuracy, excellent insulation performance, and a wide temperature range.
The process gas lines use VCR connections, which provide excellent sealing performance.
Features positive and negative pressure display, furnace overpressure protection, overtemperature protection, water flow pressure and water temperature protection, as well as open-circuit protection.Technical Parameters
Product Model HITSemi-LPCVD-200 Maximum temperature 1150°C Operating temperature ≤1100°C Number of tubes 1–2 tubes (customizable) Furnace tube Imported quartz; φ100mm–φ200mm, length: 1200mm (customizable) Length of the Constant Temperature Zone 400mm Number of temperature control zones 3 segments; each segment can be controlled independently. Heating rate Adjustable from 1°C/min to 10°C/min Temperature control accuracy in the constant temperature zone ±1°C Temperature measurement accuracy ±1%FS Temperature control protection Features include over‑temperature protection, open‑circuit protection, and leakage current protection (with a leakage circuit breaker). Workpiece pressure range 13 Pa ~ 1330 Pa Non‑uniformity of the film layer Better than or equal to ±5% Temperature Control Mode Temperature Control Mode: Employs a 30-segment program-controlled intelligent PID regulation with microcomputer control and programmable temperature curves, requiring no supervision (fully automatic heating, cooling, and maintaining temperature). Process gas SiH 4 , NH 3 , N 2 O, N 2 Control Form Semi-automatic / Fully automatic Control System PLC + Touch Screen Constant-temperature chilled water tank Optional Air compressor Optional Note: Does not include an exhaust gas treatment system. Operating Conditions of the Equipment
Power Supply Three-phase five-wire system, AC 380V, 50Hz Power Approximately 20 kW Cooling water ≤150 L/min Pneumatic component supply pressure 0.5 MPa to 0.7 MPa Gas Supply Pressure for Mass Flow Controllers 0.05 MPa to 0.2 MPa Operating temperature 10°C–40°C Work environment humidity ≤50%
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Address: 1704, Building 1, Chongwen Park, Nanshan Zhiyuan, 3370 Liuxian Avenue, Nanshan District, Shenzhen City, Guangdong Province
Shenyang Office Address: Shenyang University Science Park, No.15 Wanghua South Street, Dadong District, Shenyang City, Liaoning Province
Telephone:13632750017
E-mail:sales@hitsemi.com
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