Small-scale PECVD Plasma-Enhanced Chemical Vapor Deposition Equipment HITSemi-PECVD-460
Small-scale PECVD plasma-enhanced chemical vapor deposition equipment is primarily used for the growth of silicon nitride, silicon oxide, and polycrystalline silicon thin films in a clean, vacuum environment. Utilizing single‑frequency or dual‑frequency plasma‑enhanced chemical vapor deposition technology, it is an ideal process platform for depositing high‑quality thin films of silicon nitride, silicon oxide, and polycrystalline silicon.
- Product Description
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Small-scale PECVD plasma-enhanced chemical vapor deposition equipment is primarily used for depositing thin films of silicon nitride, silicon oxide, and polycrystalline silicon in a clean, vacuum environment. Utilizing single‑frequency or dual‑frequency plasma‑enhanced chemical vapor deposition technology, it is an ideal process platform for depositing high‑quality thin films of silicon nitride, silicon oxide, and polycrystalline silicon.
Dual-frequency technology employs a 13.56 MHz RF power supply and a 400 kHz intermediate frequency power supply.
The RF power supply is used to control the plasma flux; the IF power supply is used to control the plasma energy.
Main Features
A specially designed exhaust control system, combined with plasma cleaning and particle removal technologies, further reduces particulate matter on the substrate surface.
Dual-frequency technology enhances the quality and efficiency of thin film growth.
Set up the purge line to ensure the gas path system remains clean.
Equipment safety design, detection and protection of power systems, installation of vacuum detection and alarm protection functions, temperature detection and alarm protection, pressure and flow detection with alarm protection for cooling water circulation systems, as well as process gas pipelines equipped with anti‑cross‑contamination devices.Technical Parameters
Product Model HITSemi-PECVD-460 Substrate size 1" ~6" Cavity material 304/316 (optional) stainless steel, electropolished Vacuum System Molecular pumps, mechanical pumps (dry pumps available as optional accessories) Ultimate vacuum 5×10 -5 Pa Restore work background vacuum Atmospheric up to 7×10 -4 Pa, about 30 minutes (new equipment is filled with dry nitrogen). Overall Equipment Failure Rate Shut down for 12 hours with a vacuum level ≤ 8 Pa. Sample, electrode spacing 5mm–50mm continuously adjustable on-line Work control pressure 10 Pa to 1200 Pa The frequency of a single-frequency power supply 13.56MHz The frequency of the dual‑frequency power supply. 13.56MHz/400KHz Process Power Supply RF power supply, intermediate frequency power supply Substrate stage The substrate stage can be heated up to 600°C, rotated at 2–30 rpm, raised and lowered, and water-cooled (optional). Film thickness uniformity Better than ±5% Control Form Semi-automatic / Fully automatic Process gas SiH 4 , NH 3 , N 2 O, N 2 , O 2 Constant-temperature chilled water tank Optional Air compressor Optional Note: Does not include an exhaust gas treatment system. Operating Conditions of the Equipment
Power Supply Three-phase five-wire system, AC 380V, 50Hz; grounding resistance ≤ 1Ω. Power Configure according to the equipment scale, with a peak power of 5 kW to 10 kW. Cooling water ≤100 L/min Water pressure 0.1 MPa ~ 0.15 MPa Water temperature 18°C–25°C Pneumatic component supply pressure 0.5 MPa to 0.7 MPa Gas Supply Pressure for Mass Flow Controllers 0.05 MPa to 0.2 MPa Operating temperature 10°C–40°C Work environment humidity ≤50%
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